One integrated circuit design calls for the diffusion of arsenic into silicon wafers; the background concentration of As in Si is 2.5 x 1020 atoms/m. The predeposition heat treatment is to be conducted at 1000°C for 45 minutes, with a constant surface concentration of 8x 10^26 As atoms/m³. At a drive in temperature of 1100°C, determine the diffusion time required for a junction depth of 1.21μm. For this system, values of Qd and D0 are 4.10 eV and 2.29x10^-3 m^2/s, respectively.