Consider a silicon pn-junction diode at 300K. The device designer has been asked to design a diode that can tolerate a maximum reverse bias of 25 V. The device is to be made on a silicon substrate over which the designer has no control but is told that the substrate has an acceptor doping of N₁ = 10¹8 cm-³. The designer has determined that the maximum electric field intensity that the material can tolerate is 3 × 105 V/cm. Assume that neither Zener or avalanche breakdown is important in the breakdown of the diode. (i) [8 Marks] Calculate the maximum donor doping that can be used. Ignore the built-voltage when compared to the reverse bias voltage of 25V. The relative permittivity is 11.7 (Note: the permittivity of a vacuum is 8.85 × 10-¹4 Fcm-¹) (ii) [2 marks] After satisfying the break-down requirements the designer discovers that the leak- age current density is twice the value specified in the customer's requirements. Describe what parameter within the device design you would change to meet the specification and explain how you would change this parameter.