In an n-type silicon with ( n_d = 1 × 1016 ) cm(-3), find ( nₙ ), ( n_n0 ), ( pₙ ), ( p_n0 ) when illumination in the steady-state condition resulted in ( (Delta n, ) excess electron concentration) ( Delta n = 5 × 106 ) cm(-3).
a) ( nₙ = 1.5 × 1016 ) cm(-3)
b) ( n_n0 = 1.5 × 1016 ) cm(-3)
c) ( pₙ = 1 × 1016 ) cm(-3)
d) ( p_n0 = 1 × 1016 ) cm(-3)