Answer:
Diode equation for reverse saturation current
[tex]I_o = A\times e^{\frac{-Eg}{KT}} + B\times e^{\frac{-Eg}{2KT}}[/tex]
Voltage at which diode goes into Resistive region:V=-5 volts
Voltage at which high level injection occurs:Va=0.55 volt
Voltage at which avalanche multiplication occurs:V=5volts
Explanation:
we take here forward and reverse 0.7 volt and -5 volt
As Diode current equation is express as
[tex]I_D = I_o \times (e^{\frac{V_D}{\eta V_T}} -1 )[/tex] ....................1
here [tex]I_D[/tex] is total current through the diode and [tex]I_o[/tex] is reverse saturated current and [tex]V_D[/tex] is voltage drop across diode and [tex]\eta[/tex] is idealized factor and [tex]V_T[/tex] is thermal voltage
so here we know that when Bios is forward than
[tex]V_D[/tex] = [tex]V_T[/tex] .................2
ans Bios is Reverse than
[tex]V_D[/tex] = [tex]V_R[/tex] ..................3
so here
1. diode reverse saturation current is express as
[tex]I_o = A\times e^{\frac{-Eg}{KT}} + B\times e^{\frac{-Eg}{2KT}}[/tex]
and
2. Voltage at which diode go into Reverse behavior will be
[tex]V_D[/tex] = [tex]V_R[/tex] = -5 volt
and
3. voltage at which high level injection occur that is
Va = 0.55 volt
and
4. voltage at which avalanche multiplication occurs is
Va = 5 volt